Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (1 1 1) substrates by using hydride vapor-phase epitaxy

Journal of Crystal Growth

Volumn 311, Issue 2, 2009, Pages 244-248

  Lee, K H ^a   Lee, J Y ^a   Kwon, Y H ^b   Ryu, S Y ^b   Kang, T W ^b   Yoo, C H ^c   Lee, D U ^c   Kim, T W ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Dongguk University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

A1. Nanostructures; A3. Hydride vapor phase epitaxy; B1. Nanomaterials; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; ELECTRON MICROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; HOLOGRAPHIC INTERFEROMETRY; NANORODS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SULFUR COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; VAPORS;

A1. NANOSTRUCTURES; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. NANOMATERIALS; B2. SEMICONDUCTING III-V MATERIALS; ELECTRON MICROSCOPY IMAGES; GAN NANORODS; SUBSTRATE TEMPERATURE (ST); WURZITE STRUCTURES; X-RAY DIFFRACTION (XRD) PATTERNS;

SUBSTRATES;

EID: 58749089445     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.031     Document Type: Article

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