SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4365-4368

Studies of electron trapping in GaN doped with carbon

(4) Lopatiuk, Olena a Chernyak, Leonid a Feldman, Yishai b Gartsman, Konstantin b

a UNIVERSITY OF CENTRAL FLORIDA (United States)

b WEIZMANN INSTITUTE OF SCIENCE (Israel)

Author keywords

Luminescence; Nitrides; Scanning electron microscopy; Semiconductors

Indexed keywords

CARBON; CATHODOLUMINESCENCE; ELECTRON IRRADIATION; ELECTRON TRAPS; IRRADIATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

CATHODOLUMINESCENCE INTENSITY; CATHODOLUMINESCENCE MEASUREMENTS; ELECTRON TRAPPING; ELECTRONIC CARRIER DIFFUSION LENGTH;

GALLIUM NITRIDE;

EID: 33847024413 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2006.07.102 Document Type: Article

Times cited : (8)

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