Formation of epitaxial SiC nanocrystals

Surface Science

Volumn 601, Issue 13, 2007, Pages 2671-2674

  Pecz B ^a   Makkai, Zs ^a   Pongracz A ^a   Barsony I ^a   Deak P ^b   Josepovits, K V ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b UNIVERSITY OF PADERBORN   (Germany)

^c BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

Electron microscopy; Epitaxy; SiC

Indexed keywords

ANNEALING; ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NANOCRYSTALS; SILICON CARBIDE; SILICON WAFERS;

MULTILEVEL STRUCTURE; PROCESS PARAMETERS;

EPITAXIAL GROWTH;

EID: 34250744234     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.12.014     Document Type: Article

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