Low-temperature epitaxial growth of β-SiC by multiple-energy ion implantation

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 19, 1998, Pages 12652-12654

  Zhang, Z ^a   Naramoto, H ^a   Miyashita, A ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4244078042     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.12652     Document Type: Article

References (12)

1. L. Tong, M. Mehregany, and L. G. Matus, Appl. Phys. Lett. 60, 2992 (1992).
2. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
3. A. Nejim, P. L. F. Hemment, and J. Stoemenos, Appl. Phys. Lett. 66, 2646 (1995).
4. P. Martin, B. Daudin, M. Dupuy, A. Ermolief, M. Olivier, A. M. Papon, and G. Rolland, J. Appl. Phys. 67, 2908 (1990).
5. W. Wesch, Nucl. Instrum. Methods Phys. Res. B 116, 305 (1996).
6. J. A. Borders, S. T. Picraux, and W. Beezhold, Appl. Phys. Lett. 18, 509 (1971).
7. T. Kimura, S. Yugo, S. B. Zhou, and Y. Adachi, Nucl. Instrum. Methods Phys. Res. B 39, 238 (1989).
8. N. V. Nguyen and K. Vedam, J. Appl. Phys. 67, 3555 (1990).
9. J. K. N. Lindner, A. Frohnwieser, B. Rauschenbach, and B. Stritzker, in Beam-Solid Interactions for Materials Synthesis and Characterization, edited by D. E. Luzzi, T. F. Heinz, M. Iwaki, and D. C. Jacobson, MRS Symposia Proceedings No. 354 (Materials Research Society, Pittsburgh, PA, 1995), p. 171.
10. K. J. Reeson, P. L. F. Hemment, J. Stoemenos, J. Davis, and G. E. Celler, Appl. Phys. Lett. 51, 2242 (1981).
11. A. Chayahara, M. Kinchi, A. Kinomura, and Y. Mokuno, Jpn. J. Appl. Phys., Part 2 32, L1286 (1993).
12. K. Kh. Nussupov, V. O. Sigle, and N. B. Bejsenkhanov, Nucl. Instrum. Methods Phys. Res. B 82, 69 (1993).