The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Applied Physics B: Lasers and Optics

Volumn 95, Issue 4, 2009, Pages 795-799

  Hlubina, P ^a   Lunacek J ^a   Ciprian, D ^a  

^a VSB TECHNICAL UNIVERSITY OF OSTRAVA   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; DOPANT CONCENTRATIONS; EXPERIMENTAL DATA; INTERFEROMETRIC PHASE; SILICON SUBSTRATES; SPECTRAL REFLECTANCES; SPECTRAL REFLECTOMETRY; THERMAL OXIDATION; THIN-FILM STRUCTURE;

INTERFEROMETRY; MICHELSON INTERFEROMETERS; REFLECTION; REFLECTOMETERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; THIN FILM DEVICES; THIN FILMS;

SILICON WAFERS;

EID: 67349177319     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-009-3418-y     Document Type: Article

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