Thin film silicon n-i-p solar cells deposited by VHF PECVD at 100 °C substrate temperature

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 680-683

  Brinza, M ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Amorphous; Low temperature; Microcrystalline; PECVD; Silicon; Solar cell; Thin film

Indexed keywords

ABSORBER LAYERS; AMORPHOUS; BACK REFLECTORS; LOW TEMPERATURE; MICROCRYSTALLINE; PECVD; POST-DEPOSITION ANNEALING; QUALITY LAYERS; RMS ROUGHNESS; ROUGH SUBSTRATES; STAINLESS STEEL FOILS; SUBSTRATE TEMPERATURES; THIN-FILM SILICONS; VERY HIGH FREQUENCY PLASMAS; VHF-PECVD;

CELL MEMBRANES; MICROCRYSTALLINE SILICON; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; STAINLESS STEEL; SUBSTRATES; THIN FILM DEVICES; THIN FILMS;

AMORPHOUS SILICON;

EID: 67349170435     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.09.013     Document Type: Article

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