SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 776-778

Stamp replication for thermal and UV nanoimprint lithography using a UV-sensitive silsesquioxane resist

(7) Kehagias, N a,b Reboud, V a,b De Girolamo, J c Chouiki, M c Zelsmann, M c Boussey, J c Sotomayor Torres, C M a,b

a CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2 (Spain)

b INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA (Spain)

c CEA LETI (France)

Author keywords

Nanoimprint lithography; Polyhedral silsesquioxane; Stamp replication; Ultraviolet nanoimprint lithography

Indexed keywords

CRITICAL ISSUES; DIELECTRIC CONSTANTS; EPOXY GROUPS; FUNCTIONALIZED; HIGH THERMALS; MASK FABRICATIONS; MASS PRODUCTIONS; MECHANICAL RESISTANCES; NANO-IMPRINT LITHOGRAPHIES; ORGANIC/INORGANIC; POLYHEDRAL SILSESQUIOXANE; STAMP REPLICATION; ULTRA VIOLETS; ULTRAVIOLET NANOIMPRINT LITHOGRAPHY; UV-NANOIMPRINT LITHOGRAPHIES;

DIELECTRIC MATERIALS; FUNCTIONAL POLYMERS; LITHIUM BATTERIES; MASKS; POLYMER MATRIX COMPOSITES;

NANOIMPRINT LITHOGRAPHY;

EID: 67349122619 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2009.01.052 Document Type: Article

Times cited : (14)

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