Epoxy silsesquioxane resists for UV nanoimprint lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2271-2275

  De Girolamo, J ^a   Chouiki, M ^a   Tortai, J H ^a   Sourd, C ^a   Derrough, S ^a   Zelsmann, M ^a   Boussey, J ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC COMPOSITION; CHEMICAL REACTIONS; CURING; DIELECTRIC MATERIALS; EPOXY RESINS; INFRARED SPECTROSCOPY; MECHANICAL PROPERTIES; MONOMERS; NANOIMPRINT LITHOGRAPHY; POLYMERIZATION; POLYMERS; RESINS; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

ALIPHATIC SPACERS; ATMOSPHERIC CONDITIONS; ELECTRICAL INTERCONNECTS; ELLIPSOMETRIC MEASUREMENTS; EPOXY GROUPS; HIGH THERMALS; INFORMATION CONCERNING; LOW DIELECTRIC CONSTANTS; MICROELECTRONIC APPLICATIONS; ORGANIC/INORGANIC; PHOTO INITIATORS; POLYHEDRAL OLIGOMERIC SILSESQUIOXANE; POLYMERIZATION MECHANISMS; RESIN COMPOSITIONS; SILSESQUIOXANE; THERMAL RESISTANCES; UV CURING; UV RADIATIONS;

CATIONIC POLYMERIZATION;

EID: 57249086346     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2998709     Document Type: Article

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