Electronic structure of insulator-confined ultra-thin Si channels

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2043-2046

  Sushko, P V ^a   Shluger, A L ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

ab initio; Confinement; Effective mass; Si channels

Indexed keywords

DANGLING BONDS; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; PROBABILITY DENSITY FUNCTION;

EFFECTIVE MASS; SI CHANNELS;

SEMICONDUCTING SILICON;

EID: 34249099099     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.086     Document Type: Article

References (13)

1. Watanabe H., Matsushita D., and Muraoka K. IEEE Trans. Electron Dev. 53 (2006) 1323-1330
2. Asenov A., Kaya S., and Davies J.H. IEEE Trans. Electron Dev. 49 (2002) 112-119
3. Giustino F., and Pasquarello A. Phys. Rev. B 71 (2005) 144104
4. Sacconi F., Povolotskyi M., Di Carlo A., Lugli P., and Städele M. Solid-State Electronics 48 (2004) 575-580
5. Delerue C., Allan G., and Lannoo M. Phys. Rev. Lett. 90 (2003) 076803
6. Yamasaki T., Kaneta C., Uchiyama T., Uda T., and Terakura K. Phys. Rev. B 63 (2001) 115314
7. Kresse G., and Furthmüller J. Phys. Rev. B 54 (1996) 11169-11186
8. Perdew J.P., and Wang Y. Phys. Rev. B 46 (1992) 12947-12954
9. Perdew J.P., Burke K., and Ernzerhof M. Phys. Rev. Lett. 77 (1996) 3865-3868
10. V.R. Saunders, R. Dovesi, C. Roetti, R. Orlando, C.M. Zicovich-Wilson, N.M. Harrison, K. Doll, B. Civalleri, I.J. Bush, Ph. D'Arco, M. Llunell, CRYSTAL2003 User's Manual, University of Torino, Torino, (2003).
11. Nada R., Nicholas J.B., McCarthy M.I., and Hess A.C. Int. J. Quantum Chem. 60 (1996) 809-820
12. Dovesi R., Ermondi C., Ferrero E., Pisani C., and Roetti C. Phys. Rev. B 29 (1984) 3591-3600
13. Esseni D., Mastrapasqua M., Celler G., Fiegna C., Selmi L., and Saniorgi E. IEEE Trans. Electron. Dev. 48 (2001) 2842-2850