Epitaxial growth of faceted SiC single-crystal nanoparticles using a carbon nanocapsule as a reacting template

Materials Chemistry and Physics

Volumn 116, Issue 2-3, 2009, Pages 497-502

  Chen, Chien Chong ^a   Tseng, Huei Ping ^a   Huang, Tsung Yen ^a   Kuo, Jung Chang ^a   Huang, Gan Lin ^b  

^a NATIONAL CHUNG CHENG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Carbides; Ceramics; Crystal growth; Epitaxial growth

Indexed keywords

[A] GROWTH MODELS; A-CARBON; CARBON NANOCAPSULES; CERAMICS; GRAPHENE; INTERSECTION ANGLES; SIC NANOPARTICLES;

CERAMIC MATERIALS; CRYSTAL GROWTH; CRYSTALLIZATION; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; NANOCAPSULES; NANOPARTICLES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

EPITAXIAL GROWTH;

EID: 67349097100     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.04.021     Document Type: Article

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