Effect of rapid thermal annealing on Si rich SiO2 films prepared using atom beam sputtering technique

Surface and Coatings Technology

Volumn 203, Issue 17-18, 2009, Pages 2506-2509

  Warang, Trupti N ^a   Kabiraj, D ^b   Avasthi, D K ^b   Jain, K P ^b   Joshi, K U ^a   Narsale, A M ^a   Kothari, D C ^a  

^a UNIVERSITY OF MUMBAI   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Atom beam sputtering; FTIR; Raman; RTA; Si nanoparticles; SiO2

Indexed keywords

ATOM BEAM SPUTTERING; FTIR; RAMAN; RTA; SI NANOPARTICLES; SIO2;

ATOMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NANOCLUSTERS; NANOCRYSTALLINE SILICON; NANOPARTICLES; PHASE SEPARATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICA; SILICON COMPOUNDS; SILICON OXIDES; SODIUM COMPOUNDS;

FUSED SILICA;

EID: 67349091715     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.02.059     Document Type: Article

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