Improved performance by a double-insulator layer in organic thin-film transistors

Chinese Physics Letters

Volumn 23, Issue 11, 2006, Pages

  Wang, Wei ^a,c   Shi, Jia Wei ^a   Guo, Shu Xu ^a   Zhang, Hong Mei ^a   Quan, Bao Fu ^a   Ma, Dong Ge ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

DEVICE OPERATIONS; DOUBLE INSULATORS; FULL EVAPORATIONS; INSULATOR FILMS; INSULATOR LAYER; OPERATION VOLTAGE; ORDERS OF MAGNITUDE; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PERFORMANCE;

GATE DIELECTRICS;

EID: 33846127169     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/11/062     Document Type: Article

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