Ultraviolet msm photodetector based on gan micromachining

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2008, Pages 91-94

  Muller A ^a   Konstantinidis, G ^b   Dragoman, M ^a   Neculoiu, D ^a   Dinescu, A ^a   Androulidaki, M ^b   Kayambaki, M ^b   Stavrinidis, A ^b   Vasilache, D ^a   Buiculescu, C ^a   Petrini, I ^a   Anton, C ^a   Dascalu, D ^a   Kostopoulos, A ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

Dark current; GaN membranes; Nanolithography; Responsivity; UV photodetector

Indexed keywords

GAN MEMBRANES; MEMBRANE THICKNESS; MSM PHOTODETECTOR; MSM STRUCTURES; NANOLITHOGRAPHIC TECHNIQUES; RESPONSIVITY; UV DETECTOR; UV PHOTODETECTOR;

GALLIUM ALLOYS; GALLIUM NITRIDE; NANOLITHOGRAPHY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM;

PHOTODETECTORS;

EID: 67249150176     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2008.4703336     Document Type: Conference Paper

References (11)

1. E. Monroy, F. Omnes and F. Calle, "Wide-bandgap semiconductor ultraviolet photodetectors", Semicond. Sci. technol, 18, 2003, pp. R33-R51.
2. E. Monroy, F Calle, F Munoz, F. Omnes, "AlGaN metal-semiconductor- metal photodiodes", Appl. Phys. Lett., 74, 1999, p. 3401.
3. J.C. Carrano, T. Li, P.A Grudovsky., C.J Eiting., R.D. Dupuis, and J.C. Campbell, "Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single crystal GaN", J. Appl. Phys,. 83, 1998, pp. 6148-6160.
4. T. Palacios, E. Monroy, F. Calle, F. Omnes, "Highresponsivity submicron metal-semiconductor-metal ultraviolet detectors", Appl. Phys. Lett., 81, 2002, p. 1902.
5. T. Palacios, F. Calle, E. Monroy, F Munoz, "Submicron technology for III-nitride semiconductors", J Vac Sci technol B, 20, 2002, p. 2071.
6. R.W. Chuang, S.P. Chuang and S.J. Chuang, "Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates", J. Appl. Phys., 102, 2007, p. 073110.
7. A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Kostopoulos, M. Androulidaki, M. Kayambaki, D. Vasilache, "GaN membrane MSM ultraviolet photodetector", Appl. Opt., 47, 2008, pp. 1453-1456.
8. A. Krost, A. Dadgar, G. Strassburger, R. Clos, "GaN-based epitaxy on silicon: stress measurements", Phys. Stat. Sol. (a), 200, 2003, 26.
9. P.C. Chang, C.H. Chen, S.J. Chang, Y.K. Su, C.L. Yu, P.C. Chen, C.H.W ang, "AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semitransparent contacts", Semicond. Sci. Technol., vol 19(12), 2004, pp. 1354-1357.
10. B.P, M.T. Todaro, M.C. Frassanito, A. Pomarico, A passaseo, M. Lomascolo, R Cingolani and M. De Vittorio, "High responsivity GaN-based UV detectors", Electronics Lett., vol 39, Nov 2003.
11. A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, M. Androulidaki, M. Kayambaki, A. Stavrinidis, D. Vasilache, C Buiculescu, I Petrini, A. Kostopoulos, D. Dascalu, "GaN membrane supported UV photo-detectors manufactured using nano-lithographic processes, Microelectronics Journal, 2008, in press.