Gate edge roughness in electron beam direct write and its influence to device characteristics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6921, Issue , 2008, Pages

  Choi, Kang Hoon ^a   Dittrich, Rok ^a   Goldbach, Matthias ^a   Hohlea, Christoph ^a   Keil, Katja ^b   Marschner, Thomas ^a   Tesauro, Mark ^a   Thrum, Frank ^a   Zimmermann, Roy ^a   Kretz, Johannes ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

Author keywords

CD SEM metrology; Electrical characteristics; Electron beam direct write; Line edge roughness; Line width roughness; Power spectrum density

Indexed keywords

CD-SEM METROLOGY; ELECTRICAL CHARACTERISTIC; ELECTRON BEAM DIRECT WRITE; LINE EDGE ROUGHNESS; LINEWIDTH ROUGHNESS; POWER SPECTRUM DENSITY;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON OPTICS; POWER SPECTRUM; SEMICONDUCTOR DEVICES; UNITS OF MEASUREMENT;

ROUGHNESS MEASUREMENT;

EID: 67149106314     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772649     Document Type: Conference Paper

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