Capacitive effects in a three-terminal organic nano-device

Journal of Computational and Theoretical Nanoscience

Volumn 6, Issue 1, 2009, Pages 101-105

  Reis, Marcos Allan Leite ^a   Saraiva Souza, Aldilene ^b   Del Nero, Jordan ^a  

^a FEDERAL UNIVERSITY OF PARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

Quantum mechanics methodology; Source drain gate device; Three terminal device

Indexed keywords

BI-DIRECTIONAL; CAPACITIVE EFFECT; GATE CURRENT; HIGH-SPEED; LOW POTENCY; MOLECULAR RECTIFIER; NANO DEVICE; NANO-DEVICES; OPERATIONAL FREQUENCY; PULSE SIGNAL; QUANTUM MECHANICS; QUANTUM MECHANICS METHODOLOGY; REVERSE BIAS; SCHOTTKY DIODES; SOURCE-DRAIN-GATE DEVICE; SPECIFIC VALUES; SWITCH STATE; THREE-TERMINAL DEVICE;

CAPACITANCE; ELECTRIC SWITCHGEAR; MECHANICS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SWITCHES;

ELECTRIC RECTIFIERS;

EID: 67149100935     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2009.1013     Document Type: Article

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