Influence of the metal contact size on the electron dynamics and transport inside the semiconductor heterostructure nanowire

Journal of Computational and Theoretical Nanoscience

Volumn 3, Issue 4, 2006, Pages 551-559

  Radulovic, Nenad ^a   Willatzen, Morten ^a   Melnik, Roderick V N ^a,b   Voon, Lok C Lew Yan ^c  

^a UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

^b WILFRID LAURIER UNIVERSITY   (Canada)

^c WRIGHT STATE UNIVERSITY   (United States)

Author keywords

Resonant tunneling, metal contacts; Semiconductor heterostructure nanowire

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; NANOTUBES; NUMERICAL ANALYSIS; QUANTUM THEORY; TRANSIENTS; TRANSPORT PROPERTIES;

CONTACT SIZE; METAL CONTACTS; SEMICONDUCTOR HETEROSTRUCTURE NANOWIRE ]; TRANSIENT QUANTUM DRIFT DIFFUSION MODEL;

HETEROJUNCTIONS;

EID: 33845808852     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2006.3040     Document Type: Article

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