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Volumn 7271, Issue , 2009, Pages

The application of EUV lithography for 40nm node DRAM devices and beyond

Author keywords

ADT(alpha demo tool); CD(critical dimension); Extreme ultraviolet lithography; MMO; Shadowing effect

Indexed keywords

ADT(ALPHA-DEMO TOOL); ARF LITHOGRAPHY; CD(CRITICAL DIMENSION); CONTACT LAYERS; CRITICAL DIMENSION; DEVICE APPLICATION; DEVICE INTEGRATION; DRAM DEVICES; ELECTRICAL CHARACTERISTIC; EUV LITHOGRAPHY; FULL-FIELD; LOW THERMAL EXPANSION MATERIALS; MMO; NEXT GENERATION LITHOGRAPHY; PROCESS INTEGRATION; PROCESS WINDOW; RESOLUTION LIMITS; SHADOWING EFFECT;

EID: 67149099837     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814001     Document Type: Conference Paper
Times cited : (13)

References (10)
  • 1
    • 79959357002 scopus 로고    scopus 로고
    • The use of EUV lithography to produce demonstration devices
    • B. La Fontaine, et al., "The use of EUV lithography to produce demonstration devices", Proc. SPIE, Vol. 6921(2008).
    • (2008) Proc. SPIE , vol.6921
    • La Fontaine, B.1
  • 2
    • 79959352280 scopus 로고    scopus 로고
    • Imaging performance of the EUV alpha demo tool at IMEC
    • G.F Lorusso, et al., "Imaging performance of the EUV alpha demo tool at IMEC", Proc. SPIE, Vol. 6921(2008).
    • (2008) Proc. SPIE , vol.6921
    • Lorusso, G.F.1
  • 3
    • 62449213625 scopus 로고    scopus 로고
    • Full field EUV lithography: Lessons learned on EUV ADT imaging, EUV resist and EUV reticles
    • E. Hendrickx, et al., "Full field EUV lithography: lessons learned on EUV ADT imaging, EUV resist and EUV reticles". Proc. SPIE, Vol. 7140(2008)
    • (2008) Proc. SPIE , vol.7140
    • Hendrickx, E.1
  • 4
    • 67149101887 scopus 로고    scopus 로고
    • Performance of the full field EUV systems
    • Hans Meiling, et al., "Performance of the full field EUV systems", Proc. SPIE, Vol. 6921(2008).
    • (2008) Proc. SPIE , vol.6921
    • Meiling, H.1
  • 5
    • 36248985129 scopus 로고    scopus 로고
    • Full field EUV lithography turning into a reality at IMEC
    • Rik Jonckheere, et al., "Full field EUV lithography turning into a reality at IMEC", Proc. SPIE, Vol. 6607, (2007).
    • (2007) Proc. SPIE , vol.6607
    • Jonckheere, R.1
  • 6
    • 79959340556 scopus 로고    scopus 로고
    • EUV simulation extension study for mask shadowing effect and its correction
    • Hoyoung Kang, et al., "EUV simulation extension study for mask shadowing effect and its correction", Proc. SPIE, Vol. 6921(2008).
    • (2008) Proc. SPIE , vol.6921
    • Kang, H.1
  • 7
    • 42149136455 scopus 로고    scopus 로고
    • Impact of mask absorber properties on printability in EUV lithography
    • Takashi Kamo, et al., "Impact of mask absorber properties on printability in EUV lithography", Proc. SPIE, Vol. 6730(2007);
    • (2007) Proc. SPIE , vol.6730
    • Kamo, T.1
  • 9
    • 62449096994 scopus 로고    scopus 로고
    • Methodology of flare modeling and compensation in EUVL
    • Insung Kim, et al., "Methodology of Flare Modeling and Compensation in EUVL', Proc. SPIE, Vol. 7140(2008).
    • (2008) Proc. SPIE , vol.7140
    • Kim, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.