Optimal growth windows of multiferroic BiFeO3 films and characteristics of ferroelectric domain structures

Thin Solid Films

Volumn 517, Issue 20, 2009, Pages 5862-5866

  Qi, Xiaoding ^a   Tsai, Po Chou ^a   Chen, Yi Chun ^a   Lin, Qi Rui ^a   Huang, Jung Chun Andrew ^a   Chang, Wen Chih ^a   Chen, In Gann ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Bismuth ferrite; Ferroelectricity; Multiferroic; Piezoelectric force microscopy; X ray diffraction

Indexed keywords

BISMUTH FERRITE; DC BIAS; DEPOLARISATION; FAST GROWTH RATE; FERROELECTRIC DOMAIN STRUCTURE; FERROELECTRIC HYSTERESIS LOOP; FERROELECTRIC PROPERTY; FREE CARRIERS; IMPURITY PHASIS; MULTIFERROIC; OPTIMAL GROWTH; OXYGEN PARTIAL PRESSURE; PIEZOELECTRIC FORCE MICROSCOPY; PIEZORESPONSE FORCE MICROSCOPY; POLARISATION; POLYCRYSTALLINE FILM; RF-MAGNETRON SPUTTERING; SINGLE DOMAINS; SMOOTH SURFACE; SWITCHABLE; THERMODYNAMIC PARAMETER;

BISMUTH; DIFFRACTION; EPITAXIAL GROWTH; FERRITE; FERROELECTRIC FILMS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; MAGNETRON SPUTTERING; OXYGEN; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; SEMICONDUCTING BISMUTH COMPOUNDS; STOICHIOMETRY; X RAY DIFFRACTION;

EPITAXIAL FILMS;

EID: 66949149750     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.070     Document Type: Article

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