Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 229-232

  Shimizu, H ^a   Hisada, K ^a  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

Author keywords

3C SiC Si; Carbonization; Ellipsometry; Hetero Epitaxial Growth; Optical Constant; Plasma Assisted CVD; Surface Roughness; Void Rate

Indexed keywords

CARBONIZATION; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; SURFACE ROUGHNESS;

HETERO-EPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 0242413759     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.229     Document Type: Conference Paper

References (3)

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