Non-contact electrical measurements of hot and cold domains in silica dielectric breakdown

Nano Letters

Volumn 9, Issue 6, 2009, Pages 2327-2330

  Cohen, Hagai ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE PROCESS; CRITICAL POINTS; DIELECTRIC BREAKDOWNS; ELECTRICAL DATA; ELECTRICAL MEASUREMENT; HIGH QUALITY; INTERFACE EFFECT; NON-CONTACT; PERCOLATION PATH; POWER LAW; SILICA LAYERS; SURFACE DOMAINS; TWO PHASE MEDIUM;

ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; EQUATIONS OF STATE; PHASE INTERFACES; SOLVENTS;

SILICA;

EID: 66749144949     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl900770n     Document Type: Article

References (32)

1. Klein, N. Thin Solid Films 1983, 100, 335-40.
2. Lombardo, S.; Stathis, J. H.; Linder, B. P.; Pey, K. L.; Palumbo, F.; Tung, C. H. J. Appl. Phys. 2005, 98121301-1-36.
3. Houssa, M.; Pantisano, L.; Ragnarsson, L. A.; Degraeve, R.; Schram, T.; Pourtois, G.; De Gendt, S.; Groeseneken, G.; Heyns, M. M. Mat. Sci. Ens. 2006, 51, 37-85.
4. Degraeve, R.; Groeseneken, G.; Bellens, R.; Ogier, J. L.; Depas, M.; Roussel, P. J.; Maes, H. E. IEEE Trans. on Electron. Devices 1998, 45, 904-11.
5. Ieda, M. IEEE Trans. Electr. Insul. 1987, EI-22, 261-7.
6. Harrold, R. T. IEEE Trans. Electr. Insul. 1986, EI-21, 781-92.
7. Forster, E. C. J. Phys. D 1990, 23, 1506-14.
8. Forster, E. O. IEEE Trans. Electr. Insul. 1985, 20, 891.
9. Hanna, M. C.; Thompson, J. E.; Sudarshan, T. S. Annual Report, CEIDP, IEEE 1983, 245.
10. Wong, P. P.; Forster, E. O. IEEE Trans. Electr. Insul. 1982, 17, 203.
11. Ch, W.; Pistorius, A. C.; Bouma, B. C. Philips Res. Rep. 1957, 12, 6.
12. DiMaria, D. J.; Carrier, E.; Arnold, D. J. Appl. Phys. 1993, 73, 3367-84.
13. Cohen, H. Appl. Phys. Lett. 2004, 85, 1271-3.
14. Cohen, H.; Nogues, C.; Zon, I.; Lubomirsky, I. J. Appl. Phys. 2005, 97, 113701.
15. Cohen, H.; Maoz, R.; Sagiv, J. Nano Lett. 2006, 6, 2462-6.
16. (a) Cazaux, J. J. Electron Svectrosc. Relat. Phenom. 1999, 105, 155-1805.
17. (b) Kwok, R. W. M.; Lau, W. M. Pros. Surf. Sci. 1995, 50, 357-76.
18. Vilan, A.; Bendikov, T.; Cohen, H. J. Electron Svectrosc. Relat. Phenom. 2007, 162, 99-105.
19. Cohen, H.; Sarkar, S. K.; Hodes, G. J. Phys. Chem B 2006, 110, 25508-13.
20. (a) Lampert, M. A. Phys. Rev. 1956, 103, 1648-56.
21. (b) Rose, A. Phys. Rev. 1955, 97, 1538-44.
22. The usual Fowler - Nordheim behavior is altered in CREM, even in thin layers, since electrons are injected at high energies (see Cohen H. et al. Appl. Phys. Lett., in press).
23. Spectral intensity is proportional to the corresponding partial surface area.
24. Green, M. L.; Gusev, E. P.; Degreve, R.; Garfunkel, E. L. J. Appl. Phys. 2001, 90, 2057-2121.
25. See also in neuron systems:(a) Burkitt, A. N. Biol. Cybern. 2006, 95, 1.
26. (b) Burkitt, A. N. Biol. Cybern. 2006, 95, 97.
27. Probing any given energy with three detectors at different times usually washes out time instabilities.
28. (a) Duxbury, P. M.; Beale, P. D.; Leath, P. L. Phys. Rev. Lett. 1986, 57, 1052.
29. (b) Gyure, M. F.; Beale, P. D. Phys. Rev. B 1989, 40, 9533.
30. (c) Duxbury, P. M.; Beale, P. D.; Bak, H.; Schroeder, P. A. J. Phys. D 1990, 23, 1546.
31. Nitzan, A.; Galperin, M. J. Chem. Phys. 2002, 117, 10837-41.
32. This is different from the usual argument that enhanced creation of defects at the interfaces, induced by hot electrons, leads to pulse initiation at the electrodes other than at random points; see, for example, ref 4.