Formation of GaN nanodots on Si (1 1 1) by droplet nitridation

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3389-3394

  Debnath, R K ^a   Stoica, T ^a   Besmehn, A ^a   Jeganathan, K ^b   Sutter, E ^c   Meijers, R ^a   Luth H ^a   Calarco, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b BHARATHIDASAN UNIVERSITY   (India)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

A1. Atomic force microscopy; A1. Diffusion; A1. Nanostructures; A1. Nucleation; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. DIFFUSION; A1. NANOSTRUCTURES; A1. NUCLEATION; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES;

ATOMIC FORCE MICROSCOPY; ATOMS; CRYSTAL GROWTH; CRYSTALLITES; DROP FORMATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; NANOSTRUCTURES; NITRIDATION; NUCLEATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 66649108774     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.025     Document Type: Article

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