Analysis of improved efficiency of inGaN light-emitting diode with bottom photonic crystal fabricated by anodized aluminum oxide

Advanced Functional Materials

Volumn 19, Issue 10, 2009, Pages 1650-1655

  Ryu, Sang Wan ^a   Park, Joonmo ^a   Oh, Jin Kyoung ^a   Long, Dang Hoang ^a   Kwon, Kwang Woo ^b   Kim, Young Ho ^c   Lee, Jun Key ^a   Kim, Jin Hyeok ^a  

^a Chonnam National University   (South Korea)

^b NINEX Co Ltd   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIR HOLES; ANODIZED ALUMINUM OXIDE; INGAN QUANTUM WELLS; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; NANO PATTERN; OPTICAL EMISSIONS; OPTICAL POWER; OPTICAL QUALITIES; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPY IMAGES;

ALUMINA; ALUMINUM; CRYSTAL ATOMIC STRUCTURE; CURRENT DENSITY; DISLOCATIONS (CRYSTALS); FABRICATION; LIGHT EMISSION; LIGHT EMITTING DIODES; METHOD OF MOMENTS; OPTICAL MICROSCOPY; PHOTONIC CRYSTALS; SEMICONDUCTOR QUANTUM WELLS; TIME DOMAIN ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

QUANTUM EFFICIENCY;

EID: 66449095341     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200801125     Document Type: Article

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