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Volumn 615 617, Issue , 2009, Pages 55-60

Thick epitaxial layers growth by chlorine addition

Author keywords

Chlorine; High growth rate; Thick epitaxial layers

Indexed keywords

CHLORINE; GROWTH RATE; POWER SEMICONDUCTOR DIODES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; X RAY DETECTORS;

EID: 66249094989     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.55     Document Type: Conference Paper
Times cited : (14)

References (17)
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    • doi:10.4028/www.scientific.net/MSF.556-557.157
    • F. La Via, S. Leone, M. Mauceri, G. Pistone et al.: Mat. Sci. Forum, Vol. 556-557 (2007) p. 157 doi:10.4028/www.scientific.net/MSF.556-557.157.
    • (2007) Mat. Sci. Forum , vol.556-557 , pp. 157
    • La Via, F.1    Leone, S.2    Mauceri, M.3    Pistone, G.4
  • 10
    • 0035426825 scopus 로고    scopus 로고
    • Reduced order model for the CVD of epitaxial silicon from silane and chlorosilanes
    • DOI 10.1016/S0022-0248(01)01349-5, PII S0022024801013495
    • G. Valente, C. Cavallotti, M. Masi, S. Carrà: J. Crystal Growth Vol. 230 (2001), p. 247 doi:10.1016/S0022-0248(01)01349-5. (Pubitemid 32658109)
    • (2001) Journal of Crystal Growth , vol.230 , Issue.1-2 , pp. 247-257
    • Valente, G.1    Cavallotti, C.2    Masi, M.3    Carra, S.4
  • 11
    • 0003980261 scopus 로고    scopus 로고
    • (Semiconductors and Semimetals, Academic Press, San Diego), Chapter 2
    • C. Cavalotti and M. Masi: Silicon Epitaxy (Semiconductors and Semimetals, Academic Press, San Diego 2001), Chapter 2, p. 51.
    • (2001) Silicon Epitaxy , pp. 51
    • Cavalotti, C.1    Masi, M.2
  • 13
    • 18044389508 scopus 로고    scopus 로고
    • Midgap levels in both n - And p -type 4H-SiC epilayers investigated by deep level transient spectroscopy
    • DOI 10.1063/1.1886904, 122104
    • K. Danno, T. Kimoto, H. Matsunami: Appl. Phys. Lett. Vol. 86 (2005), p. 122104 doi:10.1063/1.1886904. (Pubitemid 40600887)
    • (2005) Applied Physics Letters , vol.86 , Issue.12 , pp. 1-3
    • Danno, K.1    Kimoto, T.2    Matsunami, H.3
  • 16
    • 0035426825 scopus 로고    scopus 로고
    • Reduced order model for the CVD of epitaxial silicon from silane and chlorosilanes
    • DOI 10.1016/S0022-0248(01)01349-5, PII S0022024801013495
    • G. Valente, C. Cavallotti, M. Masi, S. Carrà: J. Crystal Growth Vol. 230 (2001), p. 247 doi:10.1016/S0022-0248(01)01349-5. (Pubitemid 32658109)
    • (2001) Journal of Crystal Growth , vol.230 , Issue.1-2 , pp. 247-257
    • Valente, G.1    Cavallotti, C.2    Masi, M.3    Carra, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.