Schottky barrier formation at a carbon nanotube-Scandium junction

Chinese Physics Letters

Volumn 26, Issue 2, 2009, Pages

  He, Yu ^a   Zhang, Ming ^a   Zhang, Jin Yu ^a   Wang, Yan ^a   Yu, Zhi Ping ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; PALLADIUM; SCANDIUM; SCHOTTKY BARRIER DIODES; YARN;

A-CARBON; BARRIER FORMATION; FIELD-EFFECT TRANSISTOR; FIRST PRINCIPLE CALCULATIONS; NANOTUBE CONTACTS; P-TYPE; PERFORMANCE; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER HEIGHTS; SINGLE WALL;

CARBON NANOTUBES;

EID: 66149139115     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/2/027302     Document Type: Article

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