Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Wraback, M ^a   Shen, H ^a   Eiting, C J ^b,d   Carrano, J C ^b,c   Dupuis, R D ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b The University of Texas at Austin   (United States)

^c UNITED STATES MILITARY ACADEMY   (United States)

^d WRIGHT PATTERSON AIR FORCE BASE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHONONS; RELAXATION PROCESSES; RESONANCE;

ELECTRON RELAXATION; LATERAL EPITAXIAL OVERGROWTH (LEO); PHONON INTERACTIONS; ROOM TEMPERATURE (RT);

GALLIUM NITRIDE;

EID: 0003254956     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s109257830000507x     Document Type: Conference Paper

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