Atomic layer deposition of hafnium dioxide on TiN and self-assembled monolayer molecular film

Journal of the Electrochemical Society

Volumn 156, Issue 7, 2009, Pages

  Chen, Zhong ^a   Sarkar, Smita ^a   Biswas, Nivedita ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS DEPOSITION; CURRENT-VOLTAGE MEASUREMENTS; DIFFERENT SUBSTRATES; DIMETHYLAMIDO; ELECTRICAL PROPERTY; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; EXPOSURE-TIME; HAFNIUM DIOXIDE; HFO2 FILM; MOLECULAR ELECTRONIC DEVICE; MOLECULAR FILMS; MOLECULAR MEMORY DEVICES; MOLECULAR MONOLAYER; PHYSICAL STRUCTURES; PULSE TIME; TETRAKIS; THREE PARAMETERS;

ATOMIC LAYER DEPOSITION; ATOMS; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; HAFNIUM; HAFNIUM COMPOUNDS; MOLECULAR ELECTRONICS; MOLECULAR SPECTROSCOPY; SELF ASSEMBLED MONOLAYERS; SOLID STATE DEVICES; SPECTRUM ANALYSIS; TIN DIOXIDE; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 65949120712     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3125722     Document Type: Article

References (21)

1. S. Karthäuser, B. Lüssem, and M. Weides, J. Appl. Phys. 0021-8979, 100, 094504 (2006). 10.1063/1.2364036
2. M. Colle, M. Buchel, and M. Dago de Leeuw, Org. Electron. 1566-1199, 7, 305 (2006). 10.1016/j.orgel.2006.03.014
3. T. Kever, U. Boettger, C. Schindler, and R. Waser, Appl. Phys. Lett. 0003-6951, 91, 083506 (2007). 10.1063/1.2772191
4. C. P. Collier, G. Mattersteig, E. W. Wong, Y. Luo, K. Beverly, J. Sampaio, F. H. Raymo, J. F. Stoddart, and J. R. Heath, Science 0036-8075, 289, 1172 (2000). 10.1126/science.289.5482.1172
5. D. R. Stewart, D. A. A. Ohlberg, P. A. Beck, Y. Chen, R. Stanley Williams, J. O. Jeppesen, K. A. Nielsen, and J. Fraser Stoddart, Nano Lett. 1530-6984, 4, 133 (2004). 10.1021/nl034795u
6. R. F. Service, Science 0036-8075, 302, 556 (2003). 10.1126/science.302. 5645.556
7. C. N. Lau, D. R. Stewart, R. Stanley Williams, and M. Bockrath, Nano Lett. 1530-6984, 4, 569 (2004). 10.1021/nl035117a
8. Z. Chen, B. Lee, S. Sarkar, S. Gowda, and V. Misra, Appl. Phys. Lett. 0003-6951, 91, 173111 (2007). 10.1063/1.2800824
9. M. Ritala and M. Leskela, in Handbook of Thin Film Materials, H. S. Nalwa, Editor, Vol. 1, pp. 103-159, Academic, San Diego (2002).
10. M. Leskela and M. Ritala, Angew. Chem., Int. Ed. 1433-7851, 42, 5548 (2003). 10.1002/anie.200301652
11. A. Sinha, D. W. Hess, and C. L. Henderson, J. Electrochem. Soc. 0013-4651, 153, G465 (2006). 10.1149/1.2184068
12. M. Yan, Y. Koide, J. R. Babcock, P. R. Markworth, J. A. Belot, T. J. Marks, and R. P. H. Chang, Appl. Phys. Lett. 0003-6951, 79, 1709 (2001). 10.1063/1.1402959
13. M. H. Park, Y. J. Jang, H. M. Sung-Suh, and M. M. Sung, Langmuir 0743-7463, 20, 2257 (2004). 10.1021/la035760c
14. S. Gowda, G. Mathur, Q. L. Li, S. Surthi, and V. Misra, IEEE Trans. Nanotechnol. 1536-125X, 5, 258 (2006). 10.1109/TNANO.2006.874046
15. C. A. Wilson, R. K. Grubbs, and S. M. George, Chem. Mater. 0897-4756, 17, 5625 (2005). 10.1021/cm050704d
16. S. Ferrari, F. Perissionotti, E. Peron, L. Fumagalli, D. Natali, and M. Sampietro, Org. Electron. 1566-1199, 8, 407 (2007). 10.1016/j.orgel.2007.02.004
17. R. Cooper, H. P. Upadhyaya, T. K. Minton, M. R. Berman, X. Du, and S. M. George, Thin Solid Films 0040-6090, 516, 4036 (2008). 10.1016/j.tsf.2007.07.150
18. Z. M. Liu, I. Schmidt, P. Thamyongkit, R. S. Loewe, D. Syomin, J. R. Diers, Q. Zhao, V. Misra, J. S. Lindsey, and D. F. Bocian, Chem. Mater. 0897-4756, 17, 3728 (2005). 10.1021/cm047858y
19. Z. Liu, A. A. Yasseri, J. S. Lindsey, and D. F. Bocian, Science 0036-8075, 302, 5650 (2003).
20. M. D. Groner, F. H. Fabrequette, J. W. Elam, and S. M. George, Chem. Mater. 0897-4756, 16, 639 (2004). 10.1021/cm0304546
21. EAG Services Introduction, http://www.cea.com/files/literature/BR008.pdf (last accessed April 28, 2009).