High index 193 nm immersion lithography: The beginning or the end of the road

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7274, Issue , 2009, Pages

  Zimmerman, Paul A ^a   Rice, Bryan J ^a   Piscani, Emil C ^b   Liberman, Vladimir ^c  

^a INTEL CORPORATION   (United States)

^b SEMATECH   (United States)

^c MIT LL

Author keywords

High NA imaging; High refractive index; Immersion lithography

Indexed keywords

193NM IMMERSION LITHOGRAPHY; ABSORBANCE; ALTERNATIVE TECHNOLOGIES; DOUBLE PATTERNING; ECONOMIC FORCES; HIGH INDEX; HIGH INDEX MATERIALS; HIGH NA IMAGING; HIGH REFRACTIVE INDEX; IMMERSION LITHOGRAPHY; MANUFACTURING IS; OPPORTUNITY COSTS; PARADIGM SHIFTS; SEMATECH; SEMICONDUCTOR INDUSTRY;

LIGHT REFRACTION; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTOR DEVICE MANUFACTURE;

PHOTOLITHOGRAPHY;

EID: 65849170262     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814381     Document Type: Conference Paper

References (46)

1. 2 6T-SRAM Cell," IEDM Proc., p. 625. (2008)
2. Veloso, A., Demuynck, S., Ercken, M., Goethals, A.M., . Demand, M., de Marneffe, J.F., Altamirano, E., De Keersgieter, A., Delvaux, C., De Backer, J., Brus, S., Hermans, J., Baudemprez, B., Van Roey, F., Lorusso, G.F., Baerts, C., Goossens, D., Vrancken, C., Mertens, S., Versluijs, J.J., Truffert, V., Huffman, C., Full-Field EUV and Immersion Lithography Integration in 0.186 μm2 FinFET 6T-SRAM Cell, IEDM Proc., p861, (2008)
3. French, R.H. Tran, H.V., Adelman D.J. Rogado, N.S., Kaku, M., Mocella, M., Chen, C.Y. Hendrickx, E., Van Roey, F., Bernfeld, A.S. Derryberry, R.A., Optical Microlithography XXI, ed. H. J. Levinson, M.V. Dusa, Proc of SPIE Vol. 6924, 692417, (2008)
4. Lord Rayleigh, "Investigations in Optics with specialreference to Spectroscope", Philosophical Magazine, Vol. III, 261-274, (1879),
5. Vol. IX 40-55, (1880)
6. and Vol. X, 116-119, (1880).
7. McIntyre, G., Sanders, D., Sooriyakumaran, R., Truong, H., and Allen, R., "The limitations of high index resists for 193nm hyperNA lithography", Optical Microlithography XXI, ed. H. J. Levinson, M. V. Dusa, Proc of SPIE Vol. 6923, 692304, (2008).
8. Burnett, J.H., Kaplan, S.G., Shirley, E.L., Horowitz, D., Clauss, W., Grenville, A., and Van Peski, C., "High index optical materials for 193 nm immersion lithography," Proc SPIE 6154, 615418, (2006).
9. Nawata, T., Inui, Y., Mabuchi, T., Mochizuki, M., Masada, I., Nishijima, E., Sato, H., and Fukuda, T., "Fluoride single crystals for the next generation lithography" Optical Microlithography XXI, ed. H J. Levinson, Mi. V. Dusa, Proc SPIE 6924, 9242L (2008)
10. th International Immersion Symposium at the Hague, (2008).
11. Bloomstein, T.M., Liberman, V., Rothschild, M., Efremow, Jr., N.N., Hardy, D.E., and Palmacci, S.T., "UV cleaning of contaminated 157-nm reticles," Proc. SPIE 4346, 669, (2001).
12. Godmanis, I.T., Trukhin, A.N., and Hubner, K., Phys. Status Solidi B 116, 279, (1983).
13. Liberman, V., Rothschild, M., Palmacci, S.T., Bristol, R., Byers, J, Turro, N.J., Lei, X., O'Connor, N., Zimmerman, P.A., "High index immersion lithography: preventing lens photocontamination and identifying optical behavior of LuAG," Proc. SPIE 6924, 692416.(2008).
14. Piponen K.E. and Vartitianen, E.M., "Kramers-Kronig relation in Optical data inversion", Physical rev. B, 44(15), p8301, (1991).
15. French, R. H., Liberman, V., Tran, H.V., Feldman, J., Adelman, D.J., Wheland, R.C., Qiu, W., McLain, S.J.,. Nagao, O., Kaku, M., Mocella, M., Yang, M.K, Lemon, M.F., Brubaker, L., Shoe, A.L., Fones, B., Fischel, B.E., Krohn, K., Hardy, D., Chen, C.H., "High Index Immersion Lithography With Second Generation Immersion Fluids To Enable Numerical Apertures of 1.55 For Cost Effective 32 nm Half Pitches" Volume 6520, pp. SPIE, (2007).
16. J. Santillan, A. Otoguro, T. Itani, K. Fujii, A. Kagayama, T. Nakano, N. Nakayama, T Norio; H. Tmatani, S Fukuda, "Novel high refractive index fluids for 193 nmImmersion Lithography", Optical Microlithography XIX. Edited by Fiagello, Donis G. Proceedings of the SPIE, Volume 6154, pp. 1592-1599 (2006).
17. th Intl. Symp. on Immersion Lithography, Keystone Colorado ,USA, Oct 2007.
18. Furukawa, T. Kishida, T., Miyamatsu, T., Kawaguchi, K., Yamada, K., T. Tominaga, T., Liu, Z., Slezak, M., Hieda, K., "High Refractive Index Fluids and Top Coat Design for next generation ArF immersion lithography", 4th Intl. Symp. on Immersion Lithography, Keystone Colorado ,USA, Oct 2007.
19. J. Lopez-Gejo, J. Kunjappu, T. Zhou, J., Smith, B.W., Zimmerman, P.A., Conley, W., and Turro, N.J., Polycycloalkanes as Potential Third-Generation Immersion Fluids for Photolithography at 193 nm, Chem. Mater. 2007, 19, 3641-3647
20. Gejo,J-L., Kunjappua, J.T., Zhou, J., Smith, B.W., Zimmerman, P.A., Conley, W., Turro, N.J., "Outlook for potential thirdgeneration immersion fluids", Advances in Resist Materials and Processing Technology XXIV, edited by Qinghuang Lin Proc of SPIE Vol. 6519, 651921,(2007)
21. Smith, B.W., Zhou, J., Fan, F., Bourov, A., "Inorganic immersion fluids for ultrahigh numerical aperture 193 nm lithography," Applied Optics, Vol. 45, Issue 13, pp. 3077-3082, (2006).
22. rd Intl. Symp. on Immersion Lithography, Kyoto, Japan, Oct 2006.
23. th Intl. Symp. on Immersion Lithography, Keystone Colorado ,USA, Oct 2007.
24. Lorentz, H. A.Ann. Phys. 1880, 9, 641.
25. (b) Lorenz, L. Ann. Phys. 1880, 11, 70.
26. Bremer, L., Tuinier, R., and Jahromi, S., "High Refractive Index Nanocomposite Fluids for Immersion Lithography",Langmuir, 2009, 25 (4), 2390-2401, 2009.
27. Zimmerman, P.A., Byers, J., Rice, B.J., Ober, C.K., Giannelis, E.P., Rodriguez, R., Wang, D., O'Connor, N., Lei, X., Turro, N.J., Liberman, V., Palmacci, S.J., Rothschild, M., Lafferty, N., Smith, B.W., Development and Evaluation of 193 nm Immersion Generation Three Fluid Candidates, Advances in Resist Materials and Processing Technology XXV Editor: Clifford L. Henderson, Proc of SPIE Vol. 6923, 69230A, (2008).
28. Jerman, M.; Qiao, Z.; Mergel, D. Appl. Opt. 3006 44, 2005.
29. Cao, L.; Zhenyu, W.; Bingsou, Z.; Jiahua, D.; Sishen, X. Chem. J. Internet, 45, 4, 2002
30. th International Symposium on Immersion Lithography Extensions, The Hague, October 2008.
31. Tang, T., Fabbri, J., Robinson, R.D., Y., Herman, I.P., Steigerwald, M.L., Brus, L.E.,Chem. Mater., 16, 1336 (2004)
32. th Intl Symp.on Immersion Lithography Extensions, The Hague, October 2008.
33. Trikeriotis, M., Rodriguez, R., Zettel, M.F., Bakandritsos, A., Bae., W.J., Zimmerman, P.A., Ober, C.K., Giannelis, E.P., " Highrefractive index nanoparticle fluids for 193 nm immersion lithography", Advances in Resist Materials and Processing Technology XXV Editor: C.L. Henderson, Proc. of SPIE, IN PRESS, (2009).
34. rd Intl. Symp. on Immersion Lithography, Kyoto, Japan, Oct (2006).
35. Smith, B.W., Zhou, J., "Snell or Fresnel - The influence of material index on hyper NA lithography," Optical Microlithography XX. Edited by Fiagello, Donis G. Proceedings of the SPIE, Volume 6520, pp. 65200A (2007).
36. Zimmerman, P.A. Byers, J. Piscani, E.C., Rice, B.J.,. Ober, C.K., Giannelis, E.P., Rodriguez, R., Wang, D., Whittaker, A., Blakey, I., Chen, L., Dargaville, B., Liu, H., "Development of an operational high refractive index resist for 193 nm immersion lithography", Adv. in Resist Mat. and Processing Technology XXV Ed. C.L. Henderson, Proc. of SPIE Vol. 6923, 69230A, (2008).
37. rd Intl. Symp. on Immersion Lithography, Kyoto, Japan, Oct 2006.
38. rd Intl. Symp. on Immersion Lithography, Kyoto, Japan, Oct 2006.
39. Costner, E. Matsumoto, K., Nishimura, I, Ueda, M, Willson, C.G., "High Index Resists for 193 nm Immersion Lithography", Advances in Resist Materials and Processing Technology XXV, ed. by Clifford L. Henderson, Proc of SPIE Vol. 6923, 692305, (2008)
40. th Intl. Symp. on Immersion Lithography, Keystone Colorado ,USA, Oct 2007
41. P.A.Zimmerman, C.Van Peski, B. Rice, J. Byers, N.J.Turro, X. Lei, J.L Gejo, V. Liberman, S. Palmacci, M. Rothschild, A. Whittaker, I.Blakey, L. Chen, B. Dargaville and Heping Liu, "Status of High index Materials for Generation-Three 193 nm Immersion Lithography, J. Poly. Sci Tech., 20(5), 643-650, 2007
42. Sondi, I., Fedynyshyn, T.H., Sinta, R., Matijevic, E., "Encapsulation of Nanosized Silica by in Situ Polymerization of tert-Butyl Acrylate Monomer", Langmuir 2000, 16, 9031-9034
43. Fedynyshyn, T.H., et al., Encapsulated Inorganic Resist Technology,Proc.of SPIE Vol. 3999 (2000)
44. Fedynyshyn, T.H., et al., Encapsulated inorganic resist technology applied to 157 nm-lithography, Proc. SPIE Vol. 4345 (2001)
45. Bae., W.J., Trikeriotis, M., Rodriguez, R., Zettel, M.F., Bakandritsos, A., Zimmerman, P.A., Ober, C.K., Giannelis, E.P., " Highrefractive index nanoparticle fluids for 193 nm immersion lithography", Advances in Resist Materials and Processing Technology XXVI Editor: C.L. Henderson, Proc. of SPIE, IN PRESS, (2009).
46. Piscani, E.C., Ashworth, D., Byers, J., Van Peski, C., Zimmerman, P., and Rice, B.J.; "Continuing 193 nm Optical Lithography for 32 nm Imaging and Beyond, " Proc. SPIE 6924, 692421, (2008).