Encapsulated inorganic resist technology applied to 157 nm-lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 308-318

  Fedynyshyn, Theodore H ^a   Sinta, Roger F ^a   Sworin, Michael ^a   Goodman, Russell B ^a   Doran, Scott P ^a   Sondi, Ivan ^b   Matijevic, Egon ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b CLARKSON UNIVERSITY   (United States)

Author keywords

248 and 157 nm wavelength; Absorbance; Encapsulated inorganic resist technology (EIRT); Lithography

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; IMAGING TECHNIQUES; MASKS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; OPTICAL RESOLVING POWER; PLASMA ETCHING; PROJECTION SYSTEMS; SILICA;

ENCAPSULATED INORGANIC RESIST TECHNOLOGY (EIRT);

PHOTORESISTS;

EID: 0034764897     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436860     Document Type: Article

References (4)