Studies of radiation damage by 900 MeV electrons on standard and oxygen enriched silicon devices

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 77-84

  Dittongo, S ^a,b   Boscardin, M ^c   Bosisio, L ^a,b   Dalla Betta, G F ^c   Rachevskaia, I ^c  

^a UNIVERSITY OF TRIESTE   (Italy)

^b SEZIONE DI TRIESTE   (Italy)

^c ITC IRST   (Italy)

Author keywords

Electron radiation effects; High resistivity silicon devices; Radiation hardness

Indexed keywords

ELECTRONS; OXYGEN; RADIATION DAMAGE; SILICON;

SILICON DEVICES;

NUCLEAR INSTRUMENTATION;

EID: 0142031556     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01879-5     Document Type: Conference Paper

References (11)

1. Dezillie B.et al. IEEE Trans. Nucl. Sci. 47(6):2000;1892.
2. Casse G.et al. IEEE Trans. Nucl. Sci. 47(3):2000;527.
3. Lindstrom G.et al. Nucl. Inst. and Meth. A. 466:2001;308.
4. Rachevskaia I.et al. Nucl. Inst. and Meth. A. 485:2002;126.
5. Summers G.P.et al. IEEE Trans. Nucl. Sci. 40(6):1993;1372.
6. Huhtinen M., Aarnio P.A. Nucl. Inst. and Meth. A. 335:1993;580.
7. Konobeyev A. J. Nucl. Mater. 186:1992;117.
8. A. Vasilescu, G. Lindstrom, ROSE/TN/2000-02, June 2000.
9. R. Wunstorf, Ph.D. Thesis, University of Hamburg, DESY-FH1K-92-01, 1992.
10. P.J. Griffin, et al., SAND92-0094, Sandia Natl. Lab., 1993.
11. Lutz G. Nucl. Inst. and Meth. B. 95:1995;41.