Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2899-2902

  Ma, Bei ^a   Miyagawa, Reina ^a   Hu, Weiguo ^a   Li, Da Bing ^a   Miyake, Hideto ^a   Hiramatsu, Kazumasa ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A1. Electrical property; A1. Structural property; A3. MOVPE; B2. a plane GaN

Indexed keywords

A-PLANE; A-PLANE GAN; A1. ELECTRICAL PROPERTY; A1. STRUCTURAL PROPERTY; A3. MOVPE; B2. A-PLANE GAN; CARRIER DENSITY; CRYSTALLINE QUALITY; DOPING CONCENTRATION; HALL MEASUREMENTS; HIGH-RESOLUTION X-RAY DIFFRACTION; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; PLANE SAPPHIRE; ROOM TEMPERATURE; SI-DOPING; STRUCTURAL AND ELECTRICAL PROPERTIES; TEMPERATURE DEPENDENT;

ATOMIC FORCE MICROSCOPY; CORUNDUM; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FLOW RATE; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON; X RAY DIFFRACTION ANALYSIS;

STRUCTURAL PROPERTIES;

EID: 65749096482     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.040     Document Type: Article

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