Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 3033-3036

  Wang, J F ^a   Hu, X J ^a   Zhang, Y M ^a   Xu, Y ^a   Wang, H B ^a   Zhang, B S ^a   Xu, K ^a   Yang, H ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

A3. Hydride vapor phase epitaxy; B1. Nitrides

Indexed keywords

A3. HYDRIDE VAPOR PHASE EPITAXY; B1. NITRIDES; BASIC GROWTH PARAMETERS; GAN LAYERS; GROWTH STRESS; HIGH QUALITY; HYDRIDE VAPOR PHASE EPITAXY; IN-SITU; IN-SITU OPTICAL MONITORING; OPTICAL MEASURING; VAPOR PHASE EPITAXIAL;

CRYSTAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; MONITORING; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; VAPOR PHASE EPITAXY; VAPORS;

EPITAXIAL GROWTH;

EID: 65749091218     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.072     Document Type: Article

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