A comprehensive model of catastrophic optical-damage in broad-area laser-diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7198, Issue , 2009, Pages

  Chin, A K ^a   Bertaska, R K ^b   Jaspan, M A ^c   Flusberg, A M ^c   Swartz, S D ^c   Knapczyk, M T ^b   Petr, R ^c   Smilanski, I ^c   Jacob, J H ^c  

^a Aland Chin LLC   (United States)

^b New England Analytical   (United States)

^c Science Research Laboratory Inc   (United States)

Author keywords

Broad area diode lasers; Catastrophic optical damage; Failure mode analysis; Reliability

Indexed keywords

BROAD-AREA DIODE-LASERS; BROAD-AREA LASERS; CATASTROPHIC OPTICAL-DAMAGE; COMPREHENSIVE MODEL; ELECTRON-BEAM-INDUCED CURRENT; FAILURE-MODE ANALYSIS; INITIATION AND PROPAGATION; LASER DIODES; RANDOM FAILURES; RING CAVITIES;

DIODES; FAILURE ANALYSIS; LASERS; OPTICAL MICROSCOPY; QUALITY ASSURANCE; RELIABILITY ANALYSIS;

INTEGRATED OPTOELECTRONICS;

EID: 65649118659     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.804834     Document Type: Conference Paper

References (14)

1. B. W. Hakki and F. R. Nash, "Catastrophic failure in GaAs double-heterostructure injection lasers", J. Appl. Phys. 45, 3907 (1974)
2. M. Bou Sanayeh, P. Brick, W. Schmid, B. Mayer, M. Miller, M. Reufer, K. Streubel, J. W. Tomm, G. Bacher, "Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes", Appl. Phys. Lett. 91, 041115-1-041115-3 (2007)
3. Y. Sin, N. Presser, B. Foran, and S. C. Moss, "Investigation of catastrophic degradation in high power multimode InGaAs strained quantum well single emitters", Proc. of SPIE, 6876, 68760R-1-68760R-12 (2008)
4. C. W. Snyder, J. W. Lee, R. Hull, and R. A. Logan "Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy", Appl. Phys. Lett. 67, 488-490 (1995)
5. A. Hodges, J. Wang, M. DeFranza, X. Liu, B. Vivian, C. Johnson, P. Crump, P. Leisher, M. DeVito, R. Martinsen and J. Bell, "A CTE matched, hard solder, passively cooled laser diode package combined with nXLTTM facet passivation enables high power, high reliability operation", Proc. of SPIE, 6552, 65521E-1-65521E-9 (2007)
6. M. Gasser and E. E. Latta, "Method for mirror passivation of semiconductor lasers", U. S. Patent 5, 063, 173 (1991)
7. M. Bou Sanayeh, A. Jaeger, W. Schmid, S. Tautz, P. Brick, K. Steubel, and G. Bacher, "Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes", Appl. Phys. Lett. 89, 101111-1-101111-3 (2006)
8. C. H. Henry, P. M. Petroff, R. A. Logan, and F/R. Merritt, "Catastrophic damage of AlxGa1-xAs doubleheterostructure laser material", J. Appl. Phys. 50, 3721-3732 (1979)
9. K. H. Park, J. K. Lee, D. H. Jang, H. S. Cho, C. S. Park, K. E. Pyun, J. Y. Jeong, S. Nahm, J. Jeong, "Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 μm high power lasers", Appl. Phys. Lett. 73, 2567-2569 (1998).
10. V. T. Bublick and V. N. Leikin, "Calculation of the pseudobinary alloy semiconductor phase diagrams", Phys. Stat. Sol. (a) 46, 365-372 (1978)
11. H. C. Casey, Jr. and M. B. Panish, "Heterostructure Lasers Part B: Materials and Operating Characteristics", Academic Press ISBN 0-12-163102-8 (pt.B) p. 8 (1978)
12. S. Zollner, "Optical constants and critical-point parameters of GaAs from 0.73 to 6.60 eV" J. Appl. Phys. 90, 515-517 (2001)
13. J. W. Orton, P. Dawson, D. E. Lacklison, T. S. Cheng, and C. T. Foxon, "Recombination lifetime measurements in AlGaAs quantum well structures", Semicond. Sci. Tech. 9, 1616-1622 (1994)
14. G. Scarpa, N. Ulbrich, A. Sigl, M. Bichner, D. Schuh, M. -C. Amann, G. Abstreiter, "Improved large optical cavity design for 10.6 μm (Al)GaAs quantum cascade lasers", Physica E, 13, 844-847 (2002)