Investigation of catastrophic degradation in high power multi-mode InGaAs strained quantum well single emitters

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6876, Issue , 2008, Pages

  Sin, Yongkun ^a   Presser, Nathan ^a   Foran, Brendan ^a   Moss, Steven C ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

Broad area lasers; Failure modes; High power lasers; Reliability; Strained quantum well lasers

Indexed keywords

(140.3500) LASERS; ACCELERATED STRESS; CATASTROPHIC DEGRADATION; DEEP TRAPS; FAILURE MODE ANALYSIS; FIB TECHNIQUE; GENERATION AND GROWTH; HIGH POWERS; HIGH-RESOLUTION TEM (HRTEM); INJECTION CURRENTS; LIFE TESTING; LIFETIME MODELS; LINE DEFECTS; MULTI MODES; NON DESTRUCTIVE TECHNIQUE (NDT); OPTICAL OUTPUT POWER; OUTPUT POWERS; PERFORMANCE CHARACTERISTICS; PHYSICS OF FAILURE (POF); PUMP LASERS; QUANTUM WELLS; WALL PLUG EFFICIENCIES;

COMPUTER NETWORKS; DC GENERATORS; ELECTRIC CURRENTS; FAILURE (MECHANICAL); FAILURE ANALYSIS; FAILURE MODES; INJECTION (OIL WELLS); LASERS; MODAL ANALYSIS; PHYSICS; PULSED LASER DEPOSITION; PUMPING (LASER); QUALITY ASSURANCE; RELIABILITY; RELIABILITY ANALYSIS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SULFATE MINERALS; TECHNOLOGY; TRANSIENT ANALYSIS; VEGETATION;

QUANTUM WELL LASERS;

EID: 44949207406     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.761848     Document Type: Conference Paper

References (27)

1. V. Rossin, E. Zucker, M. Peters, M. Everett, and B. Acklin, "High-power high-efficiency 910-980nm broad area laser diodes," Proc. SPIE 5336, pp. 196-202, 2004.
2. B. Schmidt, B. Sverdlov, S. Pawlik, N. Lichtenstein, J. Müller, B. Valk, R. Baettig, B. Mayer, and C. Harder, "9xx high-power broad area laser diodes," Proc. SPIE 5711, pp. 201-208, 2005.
3. M. Kanskar, T. Earles, T. Goodnough, E. Stiers, D. Botez, and L. J. Mawst, "High power conversion efficiency Al free diode lasers for pumping high power solid state laser systems," Proc. SPIE 5738, pp. 47-56, 2005.
4. Z. Xu, W. Gao, L. Cheng, A. Nelson, K. Luo, A. Mastrovito, and T. Yang, "High-brightness, high-efficiency 940-980nm InGaAs/AlGaAs/GaAs broad waveguide diode lasers," Technical Digest of Conference on Lasers and Electro-Optics (CLEO), paper CMX4, 2005.
5. V. Gapontsev, I. Berishev, G. Ellis, A. Komissarov, N. Moshegov, O. Raisky, P. Trubenko, V. Ackermann, E. Shcherbakov, J. Steinecke, and A. Ovtchinnikov, "High-efficiency 970 nm multimode pumps," Proc. SPIE 5711, pp. 42-51, 2005.
6. A. H. Paxton and G. C. Dente, "Filament formation in semiconductor laser gain regions," J. Appl. Phys. 70, pp. 2921-2925, 1991.
7. R. J. Lang, D. Mehuys, D. F. Welch, and L. Goldberg, "Spontaneous filamentation in broad-area diode laser amplifiers," IEEE J. Quantum Electronics 30, pp. 685-694, 1994.
8. 0.8As/GaAs lasers," Quantum Electronics 30, pp. 401-405, 2000.
9. G. C. Dente, "Low confinement factors for suppressed filaments in semiconductor lasers," IEEE J. Quantum Electronics 37, pp. 1650-1653, 2001.
10. J. R. Marciante and G. P. Agrawal, "Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers," IEEE J. Quantum Electronics 33, pp. 1174-1179, 1997.
11. L. Goldberg, M. R. Surette, and D. Mehuys, "Filament formation in a tapered GaAlAs optical amplifier," Appl. Phys. Lett. 62, pp. 2304-2306, 1993.
12. J. R. Marciante and G. P. Agrawal, "Controlling filamentation in broad-area semiconductor lasers and amplifiers," Appl. Phys. Lett. 69, pp. 593-595, 1996.
13. M. Bou Sanayeh, A. Jaeger, W. Schmid, S. Tautz, P. Brick, K. Streubel, and G. Bacher, "Investigation of dark line defects induced by catastrophic optical damage in broad-area AlGaInP laser diodes," Appl. Phys. Lett. 89, 101111, 2006.
14. K. H. Park, J. K. Lee, D. H. Jang, H. S. Cho, C. S. Park, K. E. Pyun, J. Y. Jeong, S. Nahm, and J. Jeong, "Characterization of catastrophic optical damage in Al-free InGaAs/InGaP 0.98 μm high-power lasers," Appl. Phys. Lett. 73, pp. 2567-2569, 1998.
15. M. Vanzi, G. Salmini, and R. De Palo, "New FIB/TEM evidence for a REDR mechanism in sudden failures of 980nm SL SQW InGaAs/AlGaAs pump laser diodes," Microel. Reliab. 40, pp. 1753-1757, 2000.
16. Y. Sin, B. Foran, N. Presser, M. Mason, and S. C. Moss, "Reliability and failure mode investigation of high power multi-mode InGaAs strained quantum well single emitters", Proc. SPIE 6456 (High-Power Diode Laser Technology and Applications V), 645605, pp.1-13, 2007.
17. Y. Sin, N. Presser, B. Foran, M. Mason, and S. C. Moss, "Investigation of catastrophic optical mirror damage in high power single-mode InGaAs-AlGaAs strained quantum well lasers with focused ion beam and HR-TEM techniques", Technical Digest of Conference on Lasers and Electro-Optics (CLEO), CThEE5, pp.1-2, 2007.
18. H. J. Leamy, "Charge collection scanning electron microscopy", J. Appl. Phy. 53, pp. R51-R80, 1982.
19. R. G. Waters, D. P. Bour, S. L. Yellen, and N. F. Ruggieri, "Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers", Photonics. Technol. Lett. 2, pp. 531-533, 1990.
20. S. L. Yellen, A. H. Shepard, R. J. Dalby, J. A. Baumann, H. B. Serreze, T. S. Guido, R. Soltz, K. J. Bystrom, C. M. Harding, and R. G. Waters, "Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 μm", J. Quantum. Electron. 29, pp. 2058-2067, 1993.
21. L. C. Kimerling, "Recombination enhanced defect reactions," Solid State Electron 38, pp. 1391-1401, 1978.
22. A. Bonfiglio, M. Vanzi, M. B. Casu, F. Magistrali, M. Maini, and G. Salmini, "Interpretation of sudden failures in pump laser diodes," Proceedings from the 23rd International Symposium for Testing and Failure Analysis, Santa Clara, California, pp. 189-194, October 1997.
23. H. Y. Cho, E. K. Kim, and S. Min, "A relation between EL2 (Ec-0.81eV) and EL6 (Ec-0.35eV) in annealed HB-GaAs by hydrogen plasma exposure," J. Appl. Phy. 66, pp. 3038-3041, 1989.
24. A. C. Irvine and D. W. Palmer, "First observation of the EL2 lattice defect in indium gallium arsenide grown by molecular-beam epitaxy," Phys. Rev. Lett. 68, pp. 2168-2171, 1992.
25. M. J. Matragrano, G. P. Watson, D. G. Ast, T. J. Anderson, and B. Pathangey, "Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs," Appl. Phys. Lett. 62, pp. 1417-1419, 1993.
26. M. Fukuda, M. Okayasu, J. Temmyo, and J. Nakand, "Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation," J. Quantum Electron. 30, pp. 471-476, 1994.
27. M. Fukuda, "Reliability of high power pump lasers for erbium-doped fiber amplifiers," International J. High Speed Electron. Systems 7, pp. 55-84, 1996.