Temperature-power dependence of catastrophic optical damage in AlGaInP laser diodes

Applied Physics Letters

Volumn 91, Issue 4, 2007, Pages

  Bou Sanayeh, M ^a   Brick, P ^a   Schmid, W ^a   Mayer, B ^a   Muller M ^a   Reufer, M ^a   Streubel, K ^a   Tomm, J W ^b   Bacher, G ^c  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b MAX BORN INSTITUT   (Germany)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER LASERS; PHOTONS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

CATASTROPHIC OPTICAL DAMAGE; FACET TEMPERATURE; INJECTION CURRENT;

SEMICONDUCTOR LASERS;

EID: 34547450569     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2760143     Document Type: Article

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