Heterostructures in GaP-based Free-standing nanowires on Si substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7224, Issue , 2009, Pages

  Tateno, Kouta ^a   Zhang, Guoqiang ^a   Nakano, Hidetoshi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Heterostructure; III V compounds; Nanowire; Silicon; Vapor liquid solid growth

Indexed keywords

AIR-GAP; AU PARTICLES; BOTTOM-UP MANNER; FLAT-TOP; GAAS; GROWTH CONDITIONS; HETEROSTRUCTURE; HETEROSTRUCTURES; III-V COMPOUND SEMICONDUCTOR; III-V COMPOUNDS; INP; LONG-WAVELENGTH PHOTONS; NANO-DEVICES; NANOWIRE GROWTH; OPTOELECTRONIC INTEGRATED CIRCUITS; RADIAL DIRECTION; SI (1 1 1); SI SUBSTRATES; SI(111) SUBSTRATE; THREE-DIMENSIONAL STRUCTURE; VAPOR-LIQUID-SOLID GROWTH;

CRYSTALS; ELECTRIC WIRE; HETEROJUNCTIONS; INTEGRATED CIRCUITS; LIQUIDS; NANOCLUSTERS; NANOWIRES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUBSTRATES; VAPORS;

GALLIUM ALLOYS;

EID: 65649114000     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.810448     Document Type: Conference Paper

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