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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 33-35, 2007, Pages

Bending at thinned GaAs nodes in GaP-based free-standing nanowires

(4) Tateno, Kouta a Zhang, Guoqiang a Sogawa, Tetsuomi a Nakano, Hidetoshi a

a NTT Basic Research Laboratories (Japan)

Author keywords

Bending node; Energy dispersive X ray spectrometry; GaAs; GaP; Nanowire; Scanning electron microscopy; Transmission electron microscopy

Indexed keywords

ANNEALING; ELECTRIC FIELDS; ENERGY DISPERSIVE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

APPARENT BENDING; BENDING NODE; THINNED GAAS NODES;

NANOWIRES;

EID: 34648826750 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.L780 Document Type: Article

Times cited : (6)

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