Vertically aligned GaP/GaAs core-multishell nanowires epitaxially grown on Si substrate

Applied Physics Express

Volumn 1, Issue 6, 2008, Pages 0640031-0640033

  Zhang, Guoqiang ^a   Tateno, Kouta ^a   Sogawa, Tetsuomi ^a   Nakano, Hidetoshi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM ALLOYS; GROWTH (MATERIALS); NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; VAPOR PHASE EPITAXY; VAPORS;

AU PARTICLES; CHEMICAL ETCHINGS; CORE SHELLS; EPITAXIALLY GROWN; METAL ORGANIC; SHELL LAYERS; SI SUBSTRATES; SOLID GROWTHS; VERTICALLY ALIGNED;

ELECTRIC WIRE;

EID: 57649098990     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.064003     Document Type: Article

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