Integration and reliability issues for low capacitance air-gap interconnect structures

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 125-127

  Shieh, B P ^a   Bassman, L C ^a   Kim, D K ^a   Saraswat, K C ^a   Deal, M D ^a   McVittie, J P ^a   List, R S ^b   Nag, S ^b   Ting, L ^b  

^a STANFORD UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEPOSITION; FINITE ELEMENT METHOD; RELIABILITY; SILICA; ULSI CIRCUITS;

CAPACITANCE REDUCTION; ELECTROMIGRATION RELIABILITY; FINITE ELEMENT CODES; INTERCONNECT CAPACITANCE; INTERCONNECT STACKS; INTERCONNECT STRUCTURES; PROCESS INTEGRATION; THERMAL PERFORMANCE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84961922490     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704769     Document Type: Conference Paper

References (3)

1. B. Shieh, et al., ZEEE Electron Device Letters., 19
2. L. C. Bassman, et al., Mat. Res. SOC. Proc., 473, San Francisco, CA 1997, pp. 323-328
3. B. D. Knowlton, et al., Mat. Res. SOC. Proc., 391, no. 1, pp. 16-18. Pittsburgh, PA 1995, pp. 189-196.