Weak rectifying behaviour of p-SnS/n-ITO heterojunctions

Solid-State Electronics

Volumn 53, Issue 6, 2009, Pages 630-634

  Devika, M ^a   Koteeswara Reddy, N ^b,c   Ramesh, K ^c   Patolsky, F ^b   Gunasekhar, K R ^c  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b TEL AVIV UNIVERSITY   (Israel)

^c INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Electrical properties; Optoelectronic devices; p SnS n ITO heterojunctions; Transport mechanism

Indexed keywords

APPLIED BIAS; AS-GROWN; BIAS-VOLTAGE; ELECTRICAL PROPERTIES; ENERGY-BAND DIAGRAMS; IDEAL DIODES; JUNCTION PROPERTIES; P TYPES; P-N JUNCTIONS; P-SNS/N-ITO HETEROJUNCTIONS; PROBE METHODS; SATURATION CURRENTS; SERIES RESISTANCES; SNS FILMS; THERMAL EVAPORATION TECHNIQUES; TRANSPORT MECHANISM;

DISTILLATION; ELECTRIC PROPERTIES; ELECTROOPTICAL DEVICES; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SIGNAL TRANSDUCTION;

THERMAL EVAPORATION;

EID: 65549133713     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.006     Document Type: Article

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