Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique

Journal of Physics Condensed Matter

Volumn 19, Issue 30, 2007, Pages

  Devika, M ^a   Koteeswara Reddy, N ^b,d   Sreekantha Reddy, D ^a   Venkatramana Reddy, S ^a   Ramesh, K ^b   Gopal, E S R ^b   Gunasekhar, K R ^b   Ganesan, V ^c   Hahn, Y B ^d  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

^c CSR   (India)

^d Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GRAIN SIZE AND SHAPE; OPTIMIZATION; SINGLE CRYSTALS; THERMAL EVAPORATION; TIN COMPOUNDS;

HALL-EFFECT MEASUREMENTS; OPTICAL BAND GAP; ROOT MEAN SQUARE (RMS) ROUGHNESS; TIN MONOSULFIDE (SNS);

THIN FILMS;

EID: 34547255318     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/30/306003     Document Type: Article

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