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Volumn 603, Issue 3, 2009, Pages 319-324

The geometrical dependence of radiation hardness in planar and 3D silicon detectors

Author keywords

3D silicon detector; Inter electrode distance; Radiation damage; Signal Efficiency; SLHC

Indexed keywords

3D SILICON DETECTOR; EPITAXIAL SILICONS; FLUENCE; FLUENCES; INTER-ELECTRODE DISTANCE; RADIATION HARDNESS; SIGNAL EFFICIENCY; SILICON SUBSTRATES; SLHC;

EID: 65449169532     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.02.030     Document Type: Article
Times cited : (41)

References (20)
  • 9
    • 65649110142 scopus 로고    scopus 로고
    • in press, doi:10.1016/j.nima.2009.03.049
    • C. Da Via, et al., Nucl. Instr. and Meth. A (2009), in press, doi:10.1016/j.nima.2009.03.049.
    • (2009) Nucl. Instr. and Meth. A
    • Da Via, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.