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Volumn 603, Issue 3, 2009, Pages 319-324
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The geometrical dependence of radiation hardness in planar and 3D silicon detectors
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Author keywords
3D silicon detector; Inter electrode distance; Radiation damage; Signal Efficiency; SLHC
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Indexed keywords
3D SILICON DETECTOR;
EPITAXIAL SILICONS;
FLUENCE;
FLUENCES;
INTER-ELECTRODE DISTANCE;
RADIATION HARDNESS;
SIGNAL EFFICIENCY;
SILICON SUBSTRATES;
SLHC;
HARDNESS;
NEUTRON IRRADIATION;
NONMETALS;
RADIATION;
RADIATION DAMAGE;
RADIATION DETECTORS;
SEMICONDUCTING SILICON COMPOUNDS;
SIGNAL PROCESSING;
SUBSTRATES;
SILICON DETECTORS;
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EID: 65449169532
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/j.nima.2009.02.030 Document Type: Article |
Times cited : (41)
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References (20)
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