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Volumn 439, Issue 2, 2000, Pages 427-441

Design and test of radiation hard p+n silicon strip detectors for the ATLAS SCT

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COLLIDING BEAM ACCELERATORS; PROTON IRRADIATION; RADIATION HARDENING; RESISTORS; SILICON SENSORS;

EID: 0033908405     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00901-8     Document Type: Article
Times cited : (18)

References (18)
  • 2
    • 85031583379 scopus 로고    scopus 로고
    • ATLAS Inner Detector Technical Design Report, 1997
    • ATLAS Inner Detector Technical Design Report, 1997.
  • 11
    • 0042041290 scopus 로고
    • Swiss Federal Institute of Technology, Zürich, Switzerland
    • N. Strecker et al., DIOS users guide, Swiss Federal Institute of Technology, Zürich, Switzerland, 1995.
    • (1995) DIOS Users Guide
    • Strecker, N.1
  • 15
    • 33847531815 scopus 로고
    • Impact ionization and degradation in silicon dioxide films on silicon
    • C.R. Helms, B.E. Deal (Eds.), Plenum Press, New York
    • 2 Interface, vol. 2, Plenum Press, New York, 1993.
    • (1993) 2 Interface , vol.2
    • DiMaria, D.J.1    Arnold, D.2    Cartier, E.3
  • 16
    • 85031583954 scopus 로고    scopus 로고
    • Analysis of Irradiated and Annealed ATLAS Prototype Silicon Detectors
    • 16.06.1998
    • P. Riedler, D. Morgan, Analysis of Irradiated and Annealed ATLAS Prototype Silicon Detectors, ATLAS Internal note INDET-No-209, 16.06.1998.
    • ATLAS Internal note INDET-No-209 , vol.209
    • Riedler, P.1    Morgan, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.