3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 604, Issue 3, 2009, Pages 505-511

  Da Via C ^a   Bolle, E ^b   Einsweiler, K ^c   Garcia Sciveres, M ^c   Hasi, J ^a   Kenney, C ^d   Linhart, V ^e   Parker, Sherwood ^f   Pospisil, S ^e   Rohne, O ^b   Slavicek, T ^e   Watts, S ^a   Wermes, N ^g  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF OSLO   (Norway)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d Molecular Biology Consortium   (United States)

^e CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^f UNIVERSITY OF HAWAII   (United States)

^g UNIVERSITY OF BONN   (Germany)

Author keywords

3D silicon detectors; Active edges; Forward proton tagging; Large Hadron Collider; Radiation hardness; SLHC

Indexed keywords

3D SILICON DETECTORS; ACTIVE EDGES; FORWARD PROTON TAGGING; LARGE HADRON COLLIDER; RADIATION HARDNESS; SLHC;

COLLIDING BEAM ACCELERATORS; HARDNESS; MICROSTRIP DEVICES; NEUTRON IRRADIATION; PIXELS; PROTONS; RADIATION; RADIATION DETECTORS; READOUT SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SIGNAL TO NOISE RATIO; SILICON WAFERS; THREE DIMENSIONAL; WAFER BONDING;

SILICON DETECTORS;

EID: 65649110142     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.03.049     Document Type: Article

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