Radiation hardness properties of full-3D active edge silicon sensors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 587, Issue 2-3, 2008, Pages 243-249

  Da Via C ^a   Hasi, J ^a   Kenney, C ^c   Linhart, V ^b   Parker, Sherwood ^d   Slavicek, T ^b   Watts, S J ^a   Bem, P ^b   Horazdovsky, T ^b   Pospisil, S ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^c Molecular Biology Consortium   (United States)

^d UNIVERSITY OF HAWAII   (United States)

Author keywords

3D; Radiation hardness; Silicon detectors; SLHC

Indexed keywords

COMPUTER SIMULATION; LEAKAGE CURRENTS; RADIATION HARDENING; SILICON DETECTORS;

DAMAGE PARAMETERS; LARGE HADRON COLLIDER (LHC);

SILICON SENSORS;

EID: 40849136042     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2007.12.027     Document Type: Article

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