Tungsten oxide doped N, N′ -di(naphthalen-1-yl)- N, N′ -diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Wang, Fengxia ^a   Qiao, Xianfeng ^a   Xiong, Tao ^a   Ma, Dongge ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE EFFICIENCIES; DEVICE STABILITIES; FILM MORPHOLOGIES; HIGH EFFICIENCIES; HIGH STABILITIES; HIGH TEMPERATURES; HOLE INJECTION LAYERS; HOLE-INJECTION BARRIERS; IMPROVEMENT MECHANISMS; MAXIMUM EFFICIENCIES; OPERATIONAL VOLTAGES; ORGANIC FILMS; ORGANIC LIGHT-EMITTING DIODES; SUBSTRATE TEMPERATURES; TUNGSTEN OXIDES;

ALUMINA; CURRENT DENSITY; ELECTRON INJECTION; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDES; STABILITY; TRANSPORT PROPERTIES; TUNGSTEN; TUNGSTEN COMPOUNDS;

HOLE TRAPS;

EID: 65449148591     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116204     Document Type: Article

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