Room temperature free carrier tunneling in dilute nitride based quantum well - Quantum dot tunnel injection system for 1.3 μm

Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

  Rudno Rudzinski W ^a   Sk G ^a   Ryczko, K ^a   Syperek, M ^a   Misiewicz, J ^a   Semenova, E S ^b   Lemaitre, A ^b   Ramdane, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ANTI-CROSSING MODELS; DILUTE NITRIDES; EFFECTIVE MASS; FREE CARRIERS; INGAASN QUANTUM WELLS; INJECTOR WELLS; OPTICAL STUDIES; PHOTO-LUMINESCENCE EXCITATIONS; PHOTOREFLECTANCE SPECTROSCOPIES; QUANTUM DOTS; QUANTUM WELLS; ROOM TEMPERATURES; TUNNEL INJECTIONS;

EMISSION SPECTROSCOPY; JET PUMPS; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TUNNELING (EXCAVATION); TUNNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 65449135195     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3122935     Document Type: Article

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