On the tunnel injection of excitons and free carriers from in 0.53Ga0.47As/In0.53Ga0.23Al 0.24As quantum well to InAs/In0.53Ga0.23Al 0.24As quantum dashes

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Podemski, P ^a   Kudrawiec, R ^a   Misiewicz, J ^a   Somers, A ^b   Reithmaier, J P ^b,c   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; EXCITONS; GROUND STATE; PHONONS; SEMICONDUCTING INDIUM;

FREE CARRIERS; GROUND STATE TRANSITIONS; QUANTUM DASHES; TUNNEL INJECTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33747147455     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2243889     Document Type: Article

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