Transient carrier transfer in tunnel injection structures

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Talalaev, V G ^a,b,c   Tomm, J W ^a   Zakharov, N D ^b   Werner, P ^b   Gosele U ^b   Novikov, B V ^c   Sokolov, A S ^c,d   Samsonenko, Y B ^e,f,g   Egorov, V A ^f,g   Cirlin, G E ^e,f,g  

^a MAX BORN INSTITUT   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^d UNIVERSITY OF HEIDELBERG   (Germany)

^e IOFFE INSTITUTE   (Russian Federation)

^f RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^g INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM COMPOUNDS; GROUND STATE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ALLOYS; NANOCRYSTALS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

BARRIER THICKNESS; CARRIER TEMPERATURE; CARRIER TRANSFER; DOT GROUND STATE; QUANTUM DOT LAYERS; SINGLE QUANTUM WELL; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPIES; TUNNEL INJECTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 48249118416     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963973     Document Type: Article

References (7)

1. L. F. Register, C. Wanqiang, X. Zheng, and M. Stroscio, Int. J. High Speed Electron. Syst. 12, 239 (2002).
2. A. A. George, P. M. Smowton, Z. Mi, and P. Bhattacharya, Semicond. Sci. Technol. 22, 557 (2007).
3. Z. Mi, P. Bhattacharya, and S. Fathpour, Appl. Phys. Lett. 86, 153109 (2005).
4. V. P. Evtikhiev, O. V. Konstantinov, A. V. Matveentsev, and A. E. Romanov, Semiconductors 36, 74 (2002).
5. A. Rosenauer, Transmission Electron Microscopy of Semiconductor Nanostructures (Springer, Berlin, 2003).
6. Yu. I. Mazur, Zh. M. Wang, G. G. Tarasov, M. Xiao, G. J. Salamo, J. W. Tomm, V. Talalaev, and H. Kissel, Appl. Phys. Lett. 86, 063102 (2005).
7. V. G. Talalaev, J. W. Tomm, A. S. Sokolov, I. V. Shtrom, B. V. Novikov, A. Winzer, R. Goldhahn, G. Gobsch, N. D. Zakharov, P. Werner, U. Gösele, G. E. Cirlin, A. A. Tonkikh, V. M. Ustinov, and G. G. Tarasov, J. Appl. Phys. 100, 083704 (2006).