Electric field-induced resistance switching in (Bi2 O 3) 0.7 (Y2 O3) 0.3 films

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Shi, L ^a   Shang, D S ^a   Sun, J R ^a   Shen, B G ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FORMING PROCESS; INDUCED RESISTANCES; LINEAR VARIATIONS; OXYGEN PRESSURES; POSTANNEALING; PULSE LASER DEPOSITIONS; RESET CURRENTS; RESET VOLTAGES; RESISTANCE SWITCHING;

ACTIVATION ENERGY; ELECTRIC FIELDS; ELECTRIC RESISTANCE; OXYGEN; OXYGEN VACANCIES; PULSED LASER APPLICATIONS;

SWITCHING;

EID: 65449121766     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3106660     Document Type: Article

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