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Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon

(5) Ruffell, S a Vedi, J a Bradby, J E a Williams, J S a Haberl, B a

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI FILMS; AMORPHOUS SI; CONCENTRATION OF; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES; DEPTH RANGES; EFFECT OF OXYGENS; HIGH CONCENTRATIONS; HIGH-PRESSURE PHASIS; INDUCED PHASE TRANSFORMATIONS; OXYGEN CONCENTRATIONS; PENETRATION DEPTHS; RAMAN MICROSPECTROSCOPY; SOLID-PHASE CRYSTALLIZATIONS; UNLOADING CURVES;

CONCENTRATION (PROCESS); METALLIC GLASS; NANOINDENTATION; OXYGEN; TRANSMISSION ELECTRON MICROSCOPY; UNLOADING;

AMORPHOUS SILICON;

EID: 65449117918 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3097752 Document Type: Article

Times cited : (11)

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